Manufacturer | Microchip |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 1.1 Ohms |
Forward Transconductance - Min | 15 S |
Mounting Style | SMD/SMT |
Rise Time | 15 ns |
Vgs - Gate-Source Voltage | 30 V |
Fall Time | 24 ns |
Pd - Power Dissipation | 625 W |
Vds - Drain-Source Breakdown Voltage | 1200 V |
Product Type | MOSFET |
Package / Case | D3PAK-3 |
Number Of Channels | 1 Channel |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Packaging | Tube |
Brand | Microchip / Microsemi |
Transistor Type | 1 N-Channel |
Configuration | Single |
Vgs Th - Gate-Source Threshold Voltage | 5 V |
Qg - Gate Charge | 145 nC |
Technology | Si |
Transistor Polarity | N-Channel |
Factory Pack Quantity | 100 |
Id - Continuous Drain Current | 14 A |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 85 ns |
Typical Turn-On Delay Time | 26 ns |